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spd09p06plgbtma1 Infineon SIPMOS Type P-Channel MOSFET, 9.7 A, 60 V Enhancement, 3-Pin TO-252 SPD09P06PLGBTMA1
spd09p06plgbtma1 Infineon SIPMOS Type P-Channel MOSFET, 9.7 A, 60 V Enhancement, 3-Pin TO-252 SPD09P06PLGBTMA1
spd09p06plgbtma1 Infineon SIPMOS Type P-Channel MOSFET, 9.7 A, 60 V Enhancement, 3-Pin TO-252 SPD09P06PLGBTMA1

Infineon SIPMOS Type P-Channel MOSFET, 9.7 A, 60 V Enhancement, 3-Pin TO-252 SPD09P06PLGBTMA1

Infineon SIPMOS Type P-Channel MOSFET, 9.7 A, 60 V Enhancement, 3-Pin TO-252 SPD09P06PLGBTMA1

Manufacturer:
Infineon
Manufacturer Part No:
SPD09P06PLGBTMA1
Enrgtech Part No:
ET16793868
Warranty:
Manufacturer
SAR 0.47 SAR 0.47
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type P
Maximum Continuous Drain Current Id:
9.7A
Maximum Drain Source Voltage Vds:
60V
Package Type:
TO-252
Series:
499Ω
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
400mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
42W
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
Ladder
Forward Voltage Vf:
-1.1V
Maximum Operating Temperature:
175°C
Standards/Approvals:
No
Width:
6.22 mm
Height:
2.41mm
Length:
6.73mm
Automotive Standard:
AEC-Q101
pdf icon
0900766b81329aa2.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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