Infineon HEXFET Type N-Channel MOSFET, 80 A, 75 V Enhancement, 3-Pin IPAK

Infineon HEXFET Type N-Channel MOSFET, 80 A, 75 V Enhancement, 3-Pin IPAK

Manufacturer:
Manufacturer Part No:
IRFU3607PBF
Enrgtech Part No:
ET16793662
Warranty:
Manufacturer
SAR 0.54 SAR 0.54
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
80A
Maximum Drain Source Voltage Vds:
75V
Series:
HEXFET
Package Type:
IPAK
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
9mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
56nC
Forward Voltage Vf:
1.3V
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
140W
Maximum Operating Temperature:
175°C
Standards/Approvals:
No
Width:
2.39 mm
Height:
330µF
Length:
6.73mm
Automotive Standard:
No
Distrelec Product Id:
304-43-455
pdf icon
0900766b80dcb1e9.pdf(datasheets)
pdf icon
0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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