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irfh5210trpbf Infineon HEXFET N-Channel MOSFET, 10 A, 100 V, 8-Pin PQFN 5 x 6 IRFH5210TRPBF
irfh5210trpbf Infineon HEXFET N-Channel MOSFET, 10 A, 100 V, 8-Pin PQFN 5 x 6 IRFH5210TRPBF
irfh5210trpbf Infineon HEXFET N-Channel MOSFET, 10 A, 100 V, 8-Pin PQFN 5 x 6 IRFH5210TRPBF

Infineon HEXFET N-Channel MOSFET, 10 A, 100 V, 8-Pin PQFN 5 x 6 IRFH5210TRPBF

Infineon HEXFET N-Channel MOSFET, 10 A, 100 V, 8-Pin PQFN 5 x 6 IRFH5210TRPBF

Manufacturer:
Infineon
Manufacturer Part No:
IRFH5210TRPBF
Enrgtech Part No:
ET16793600
Warranty:
Manufacturer
SAR 2.69
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
10 A
Maximum Drain Source Voltage:
100 V
Series:
HEXFET
Package Type:
PQFN 5 x 6
Mounting Type:
Surface Mount
Pin Count:
8
Maximum Drain Source Resistance:
14.9 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4V
Minimum Gate Threshold Voltage:
2V
Maximum Power Dissipation:
104 W
Maximum Gate Source Voltage:
-20 V, +20 V
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
40 nC @ 10 V
Length:
5mm
Width:
6mm
Minimum Operating Temperature:
-55 °C
Height:
0.9mm
Forward Diode Voltage:
1.3V
pdf icon
0900766b81560d5d.pdf(datasheets)
pdf icon
0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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