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irf7342trpbf Infineon Isolated HEXFET 2 Type P-Channel MOSFET, 3.4 A, 55 V Enhancement, 8-Pin SOIC IRF7342TRPBF
irf7342trpbf Infineon Isolated HEXFET 2 Type P-Channel MOSFET, 3.4 A, 55 V Enhancement, 8-Pin SOIC IRF7342TRPBF
irf7342trpbf Infineon Isolated HEXFET 2 Type P-Channel MOSFET, 3.4 A, 55 V Enhancement, 8-Pin SOIC IRF7342TRPBF

Infineon Isolated HEXFET 2 Type P-Channel MOSFET, 3.4 A, 55 V Enhancement, 8-Pin SOIC IRF7342TRPBF

Infineon Isolated HEXFET 2 Type P-Channel MOSFET, 3.4 A, 55 V Enhancement, 8-Pin SOIC IRF7342TRPBF

Manufacturer:
Infineon
Manufacturer Part No:
IRF7342TRPBF
Enrgtech Part No:
ET16793541
Warranty:
Manufacturer
SAR 0.79 SAR 0.79
Checking for live stock
Channel Type:
Type P
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
3.4A
Maximum Drain Source Voltage Vds:
55V
Series:
HEXFET
Package Type:
SOIC
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
170mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
2W
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
37.6mm
Forward Voltage Vf:
-1.2V
Transistor Configuration:
Isolated
Maximum Operating Temperature:
150°C
Length:
5mm
Height:
1.5mm
Width:
4 mm
Standards/Approvals:
No
Number of Elements per Chip:
2
Automotive Standard:
No
pdf icon
0900766b8132ef78.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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