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ipw65r080cfdafksa1 Infineon CoolMOS CFD Type N-Channel MOSFET, 43 A, 700 V Enhancement, 3-Pin TO-247 IPW65R080CFDAFKSA1
ipw65r080cfdafksa1 Infineon CoolMOS CFD Type N-Channel MOSFET, 43 A, 700 V Enhancement, 3-Pin TO-247 IPW65R080CFDAFKSA1
ipw65r080cfdafksa1 Infineon CoolMOS CFD Type N-Channel MOSFET, 43 A, 700 V Enhancement, 3-Pin TO-247 IPW65R080CFDAFKSA1

Infineon CoolMOS CFD Type N-Channel MOSFET, 43 A, 700 V Enhancement, 3-Pin TO-247 IPW65R080CFDAFKSA1

Infineon CoolMOS CFD Type N-Channel MOSFET, 43 A, 700 V Enhancement, 3-Pin TO-247 IPW65R080CFDAFKSA1

Manufacturer:
Infineon
Manufacturer Part No:
IPW65R080CFDAFKSA1
Enrgtech Part No:
ET16793448
Warranty:
Manufacturer
SAR 5.87 SAR 5.87
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
43A
Maximum Drain Source Voltage Vds:
700V
Package Type:
TO-247
Series:
CoolMOS CFD
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
80mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
0.9V
Maximum Gate Source Voltage Vgs:
30 V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
167nC
Maximum Power Dissipation Pd:
391W
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Length:
31.5 x 22 x 36.5mm
Height:
21.1mm
Width:
361mm
Automotive Standard:
AEC-Q101
pdf icon
0900766b8147262b.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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