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ipd50p04p413atma1 Infineon OptiMOS P Type P-Channel Power Transistor, 50 A, 40 V Enhancement, 3-Pin TO-252 IPD50P04P413ATMA1
ipd50p04p413atma1 Infineon OptiMOS P Type P-Channel Power Transistor, 50 A, 40 V Enhancement, 3-Pin TO-252 IPD50P04P413ATMA1
ipd50p04p413atma1 Infineon OptiMOS P Type P-Channel Power Transistor, 50 A, 40 V Enhancement, 3-Pin TO-252 IPD50P04P413ATMA1

Infineon OptiMOS P Type P-Channel Power Transistor, 50 A, 40 V Enhancement, 3-Pin TO-252 IPD50P04P413ATMA1

Infineon OptiMOS P Type P-Channel Power Transistor, 50 A, 40 V Enhancement, 3-Pin TO-252 IPD50P04P413ATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPD50P04P413ATMA1
Enrgtech Part No:
ET16793219
Warranty:
Manufacturer
SAR 0.71 SAR 0.71
Checking for live stock
Channel Type:
Type P
Product Type:
1 x 1 x 0.38mm
Maximum Continuous Drain Current Id:
50A
Maximum Drain Source Voltage Vds:
40V
Package Type:
TO-252
Series:
0.38mm
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
12.6mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
58W
Typical Gate Charge Qg @ Vgs:
39nC
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.3V
Maximum Operating Temperature:
175°C
Standards/Approvals:
RoHS
Length:
6.5mm
Height:
2.3mm
Width:
6.22 mm
Automotive Standard:
9.2ns
pdf icon
0900766b813299ff.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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