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ipd30n08s2l21atma1 Infineon OptiMOS Type N-Channel MOSFET, 30 A, 75 V Enhancement, 3-Pin TO-252 IPD30N08S2L21ATMA1
ipd30n08s2l21atma1 Infineon OptiMOS Type N-Channel MOSFET, 30 A, 75 V Enhancement, 3-Pin TO-252 IPD30N08S2L21ATMA1
ipd30n08s2l21atma1 Infineon OptiMOS Type N-Channel MOSFET, 30 A, 75 V Enhancement, 3-Pin TO-252 IPD30N08S2L21ATMA1

Infineon OptiMOS Type N-Channel MOSFET, 30 A, 75 V Enhancement, 3-Pin TO-252 IPD30N08S2L21ATMA1

Infineon OptiMOS Type N-Channel MOSFET, 30 A, 75 V Enhancement, 3-Pin TO-252 IPD30N08S2L21ATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPD30N08S2L21ATMA1
Enrgtech Part No:
ET16793211
Warranty:
Manufacturer
SAR 0.84 SAR 0.84
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
30A
Maximum Drain Source Voltage Vds:
75V
Package Type:
TO-252
Series:
OptiMOS
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
0.05µA
Channel Mode:
Enhancement
Forward Voltage Vf:
0.9V
Typical Gate Charge Qg @ Vgs:
56nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
136W
Maximum Operating Temperature:
175°C
Standards/Approvals:
No
Length:
6.73mm
Height:
2.41mm
Width:
6.22 mm
Automotive Standard:
AEC-Q101
pdf icon
0900766b813299f3.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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