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ipd053n08n3gatma1 Infineon OptiMOS™ 3 N-Channel MOSFET, 90 A, 80 V, 3-Pin DPAK IPD053N08N3GATMA1
ipd053n08n3gatma1 Infineon OptiMOS™ 3 N-Channel MOSFET, 90 A, 80 V, 3-Pin DPAK IPD053N08N3GATMA1

Infineon OptiMOS™ 3 N-Channel MOSFET, 90 A, 80 V, 3-Pin DPAK IPD053N08N3GATMA1

Infineon OptiMOS™ 3 N-Channel MOSFET, 90 A, 80 V, 3-Pin DPAK IPD053N08N3GATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPD053N08N3GATMA1
Enrgtech Part No:
ET16793193
Warranty:
Manufacturer
SAR 4.24
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
90 A
Maximum Drain Source Voltage:
80 V
Package Type:
DPAK (TO-252)
Series:
OptiMOS™ 3
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
9.5 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
3.5V
Minimum Gate Threshold Voltage:
2V
Maximum Power Dissipation:
150 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
20 V
Width:
7.36mm
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
52 nC @ 10 V
Length:
6.73mm
Number of Elements per Chip:
1
Forward Diode Voltage:
1.2V
Minimum Operating Temperature:
-55 °C
Height:
2.41mm
pdf icon
0900766b81620e2c.pdf(datasheets)
pdf icon
0900766b81644fb3.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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