Infineon iPB Type N-Channel MOSFET, 80 A, 75 V Enhancement, 3-Pin TO-263

Infineon iPB Type N-Channel MOSFET, 80 A, 75 V Enhancement, 3-Pin TO-263

Manufacturer:
Manufacturer Part No:
IPB80N08S2L07ATMA1
Enrgtech Part No:
ET16793176
Warranty:
Manufacturer
SAR 2.07 SAR 2.07
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
80A
Maximum Drain Source Voltage Vds:
75V
Series:
iPB
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
1.7mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
81W
Forward Voltage Vf:
1.3V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
80nC
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
175°C
Standards/Approvals:
RoHS
Automotive Standard:
AEC-Q101
pdf icon
A700000009016785.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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