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ipb17n25s3100atma1 Infineon OptiMOS-T Type N-Channel MOSFET, 17 A, 250 V Enhancement, 3-Pin TO-263 IPB17N25S3100ATMA1
ipb17n25s3100atma1 Infineon OptiMOS-T Type N-Channel MOSFET, 17 A, 250 V Enhancement, 3-Pin TO-263 IPB17N25S3100ATMA1
ipb17n25s3100atma1 Infineon OptiMOS-T Type N-Channel MOSFET, 17 A, 250 V Enhancement, 3-Pin TO-263 IPB17N25S3100ATMA1

Infineon OptiMOS-T Type N-Channel MOSFET, 17 A, 250 V Enhancement, 3-Pin TO-263 IPB17N25S3100ATMA1

Infineon OptiMOS-T Type N-Channel MOSFET, 17 A, 250 V Enhancement, 3-Pin TO-263 IPB17N25S3100ATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPB17N25S3100ATMA1
Enrgtech Part No:
ET16793137
Warranty:
Manufacturer
SAR 1.15 SAR 1.15
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
17A
Maximum Drain Source Voltage Vds:
250V
Series:
https://www.traceparts.com/els/rs-components/en/api/viewer/3d?SupplierID=RS_COMPONENTS&PartNumber=2339418&DisplayLogo=False
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
100mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
Ladder
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
0.9V
Maximum Power Dissipation Pd:
107W
Maximum Operating Temperature:
175°C
Standards/Approvals:
No
Width:
9.25 mm
Height:
4.4mm
Length:
10mm
Automotive Standard:
AEC-Q101
pdf icon
0900766b81329a8a.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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