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ipb120p04p4l03atma1 Infineon OptiMOS P Type P-Channel Power Transistor, 120 A, 40 V Enhancement, 3-Pin TO-263 IPB120P04P4L03ATMA1
ipb120p04p4l03atma1 Infineon OptiMOS P Type P-Channel Power Transistor, 120 A, 40 V Enhancement, 3-Pin TO-263 IPB120P04P4L03ATMA1
ipb120p04p4l03atma1 Infineon OptiMOS P Type P-Channel Power Transistor, 120 A, 40 V Enhancement, 3-Pin TO-263 IPB120P04P4L03ATMA1

Infineon OptiMOS P Type P-Channel Power Transistor, 120 A, 40 V Enhancement, 3-Pin TO-263 IPB120P04P4L03ATMA1

Infineon OptiMOS P Type P-Channel Power Transistor, 120 A, 40 V Enhancement, 3-Pin TO-263 IPB120P04P4L03ATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPB120P04P4L03ATMA1
Enrgtech Part No:
ET16793133
Warranty:
Manufacturer
SAR 2.16 SAR 2.16
Checking for live stock
Product Type:
1 x 1 x 0.38mm
Channel Type:
Type P
Maximum Continuous Drain Current Id:
120A
Maximum Drain Source Voltage Vds:
40V
Series:
0.38mm
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
5.2mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
16 V
Maximum Power Dissipation Pd:
136W
Typical Gate Charge Qg @ Vgs:
180nC
Forward Voltage Vf:
1.3V
Maximum Operating Temperature:
175°C
Length:
10mm
Standards/Approvals:
RoHS
Width:
9.25 mm
Height:
4.4mm
Automotive Standard:
9.2ns
pdf icon
0900766b81329a7d.pdf(datasheets)
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0900766b81644fb1.pdf(datasheets)
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A700000007063301.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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