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ipb081n06l3gatma1 Infineon OptiMOS 3 Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-263 IPB081N06L3GATMA1
ipb081n06l3gatma1 Infineon OptiMOS 3 Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-263 IPB081N06L3GATMA1
ipb081n06l3gatma1 Infineon OptiMOS 3 Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-263 IPB081N06L3GATMA1

Infineon OptiMOS 3 Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-263 IPB081N06L3GATMA1

Infineon OptiMOS 3 Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-263 IPB081N06L3GATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPB081N06L3GATMA1
Enrgtech Part No:
ET16793123
Warranty:
Manufacturer
SAR 0.72 SAR 0.72
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
50A
Maximum Drain Source Voltage Vds:
60V
Package Type:
TO-263
Series:
OptiMOS 3
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
8.1mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
79W
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
22nC
Maximum Operating Temperature:
175°C
Standards/Approvals:
No
Height:
4.57mm
Width:
4.5 x 3.2 x 1.02mm
Length:
10.31mm
Automotive Standard:
No
pdf icon
0900766b8132f094.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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