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ipb029n06n3gatma1 Infineon OptiMOS 3 Type N-Channel MOSFET, 120 A, 60 V Enhancement, 3-Pin TO-263 IPB029N06N3GATMA1
ipb029n06n3gatma1 Infineon OptiMOS 3 Type N-Channel MOSFET, 120 A, 60 V Enhancement, 3-Pin TO-263 IPB029N06N3GATMA1

Infineon OptiMOS 3 Type N-Channel MOSFET, 120 A, 60 V Enhancement, 3-Pin TO-263 IPB029N06N3GATMA1

Infineon OptiMOS 3 Type N-Channel MOSFET, 120 A, 60 V Enhancement, 3-Pin TO-263 IPB029N06N3GATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPB029N06N3GATMA1
Enrgtech Part No:
ET16793105
Warranty:
Manufacturer
SAR 1.06 SAR 1.06
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
120A
Maximum Drain Source Voltage Vds:
60V
Series:
OptiMOS 3
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
3.2mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
188W
Forward Voltage Vf:
1.2V
Typical Gate Charge Qg @ Vgs:
124nC
Maximum Operating Temperature:
175°C
Standards/Approvals:
No
Length:
10.31mm
Height:
4.57mm
Width:
4.5 x 3.2 x 1.02mm
Automotive Standard:
No
pdf icon
0900766b814ae729.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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