Infineon OptiMOS 2 Type N-Channel MOSFET, 2.5 A, 20 V Enhancement, 3-Pin SOT-23

Infineon OptiMOS 2 Type N-Channel MOSFET, 2.5 A, 20 V Enhancement, 3-Pin SOT-23

Manufacturer:
Manufacturer Part No:
BSS205NH6327XTSA1
Enrgtech Part No:
ET16792579
Warranty:
Manufacturer
SAR 0.06 SAR 0.06
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
2.5A
Maximum Drain Source Voltage Vds:
20V
Package Type:
SOT-23
Series:
OptiMOS 2
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
85mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
500mW
Typical Gate Charge Qg @ Vgs:
2.1nC
Maximum Gate Source Voltage Vgs:
12 V
Forward Voltage Vf:
1.1V
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Length:
2.9mm
Height:
1.3mm
Width:
0.1 mm
Automotive Standard:
AEC-Q101
pdf icon
0900766b81427512.pdf(datasheets)
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0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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