Infineon OptiMOS Type N-Channel MOSFET, 5.2 A, 55 V Enhancement, 3-Pin SOT-223 BSP603S2LHUMA1

Infineon OptiMOS Type N-Channel MOSFET, 5.2 A, 55 V Enhancement, 3-Pin SOT-223 BSP603S2LHUMA1

Manufacturer:
Manufacturer Part No:
BSP603S2LHUMA1
Enrgtech Part No:
ET16792547
Warranty:
Manufacturer
SAR 1.23 SAR 1.23
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
5.2A
Maximum Drain Source Voltage Vds:
55V
Series:
OptiMOS
Package Type:
SOT-223
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
33mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Typical Gate Charge Qg @ Vgs:
31nC
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
1.8W
Maximum Operating Temperature:
150°C
Standards/Approvals:
RoHS
Height:
1.6mm
Width:
3.5 mm
Length:
6.5mm
Automotive Standard:
9.2ns
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0900766b802789b1.pdf(datasheets)
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0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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