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bsc052n03lsatma1 Infineon OptiMOS Type N-Channel MOSFET, 57 A, 30 V Enhancement, 8-Pin TDSON BSC052N03LSATMA1
bsc052n03lsatma1 Infineon OptiMOS Type N-Channel MOSFET, 57 A, 30 V Enhancement, 8-Pin TDSON BSC052N03LSATMA1
bsc052n03lsatma1 Infineon OptiMOS Type N-Channel MOSFET, 57 A, 30 V Enhancement, 8-Pin TDSON BSC052N03LSATMA1

Infineon OptiMOS Type N-Channel MOSFET, 57 A, 30 V Enhancement, 8-Pin TDSON BSC052N03LSATMA1

Infineon OptiMOS Type N-Channel MOSFET, 57 A, 30 V Enhancement, 8-Pin TDSON BSC052N03LSATMA1

Manufacturer:
Infineon
Manufacturer Part No:
BSC052N03LSATMA1
Enrgtech Part No:
ET16792468
Warranty:
Manufacturer
SAR 0.43 SAR 0.43
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
57A
Maximum Drain Source Voltage Vds:
30V
Series:
OptiMOS
Package Type:
TDSON
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
7.2mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
28W
Forward Voltage Vf:
0.9V
Typical Gate Charge Qg @ Vgs:
12nC
Maximum Operating Temperature:
150°C
Height:
1.1mm
Length:
6.1mm
Standards/Approvals:
No
Width:
5.35 mm
Automotive Standard:
No
Distrelec Product Id:
304-44-408
pdf icon
0900766b8132937c.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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