ROHM RU1C002ZP Type P-Channel MOSFET, 200 mA, 20 V Enhancement, 3-Pin SOT-323 RU1C002ZPTCL

ROHM RU1C002ZP Type P-Channel MOSFET, 200 mA, 20 V Enhancement, 3-Pin SOT-323 RU1C002ZPTCL

Manufacturer:
Manufacturer Part No:
RU1C002ZPTCL
Enrgtech Part No:
ET16782571
Warranty:
Manufacturer
SAR 0.07 SAR 0.07
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Product Type:
MOSFET
Channel Type:
Type P
Maximum Continuous Drain Current Id:
200mA
Maximum Drain Source Voltage Vds:
20V
Series:
RU1C002ZP
Package Type:
SOT-323
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
1.2Ω
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
1.8 x 1.35 x 1mm
Maximum Power Dissipation Pd:
150mW
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
1.4nC
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
150°C
Length:
2.1mm
Standards/Approvals:
RoHS
Width:
1.35 mm
Height:
1mm
Automotive Standard:
No
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0900766b815399c8.pdf(datasheets)
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0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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