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zxmn6a11gta DiodesZetex ZXMN6A11G Type N-Channel MOSFET, 4.4 A, 60 V Enhancement, 4-Pin SOT-223 ZXMN6A11GTA
zxmn6a11gta DiodesZetex ZXMN6A11G Type N-Channel MOSFET, 4.4 A, 60 V Enhancement, 4-Pin SOT-223 ZXMN6A11GTA
zxmn6a11gta DiodesZetex ZXMN6A11G Type N-Channel MOSFET, 4.4 A, 60 V Enhancement, 4-Pin SOT-223 ZXMN6A11GTA

DiodesZetex ZXMN6A11G Type N-Channel MOSFET, 4.4 A, 60 V Enhancement, 4-Pin SOT-223 ZXMN6A11GTA

DiodesZetex ZXMN6A11G Type N-Channel MOSFET, 4.4 A, 60 V Enhancement, 4-Pin SOT-223 ZXMN6A11GTA

Manufacturer:
DiodesZetex
Manufacturer Part No:
ZXMN6A11GTA
Enrgtech Part No:
ET16759917
Warranty:
Manufacturer
SAR 0.59 SAR 0.59
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
HLMP-Q800
Maximum Drain Source Voltage Vds:
60V
Package Type:
SOT-223
Series:
ZXMN6A11G
Mount Type:
Surface
Pin Count:
4
Maximum Drain Source Resistance Rds:
180mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
0.95V
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
5.7nC
Maximum Power Dissipation Pd:
3.9W
Maximum Operating Temperature:
150°C
Length:
6.7mm
Width:
3.7 mm
Height:
1.8mm
Standards/Approvals:
No
Automotive Standard:
AEC-Q100
pdf icon
0900766b80e56185.pdf(datasheets)
pdf icon
0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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