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si4909dy-t1-ge3 Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 6.5 A, 40 V Enhancement, 8-Pin SOIC SI4909DY-T1-GE3
si4909dy-t1-ge3 Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 6.5 A, 40 V Enhancement, 8-Pin SOIC SI4909DY-T1-GE3
si4909dy-t1-ge3 Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 6.5 A, 40 V Enhancement, 8-Pin SOIC SI4909DY-T1-GE3

Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 6.5 A, 40 V Enhancement, 8-Pin SOIC SI4909DY-T1-GE3

Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 6.5 A, 40 V Enhancement, 8-Pin SOIC SI4909DY-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SI4909DY-T1-GE3
Enrgtech Part No:
ET16723669
Warranty:
Manufacturer
SAR 0.58 SAR 0.58
Checking for live stock
Product Type:
Power MOSFET
Channel Type:
Type P
Maximum Continuous Drain Current Id:
6.5A
Maximum Drain Source Voltage Vds:
40V
Package Type:
SOIC
Series:
TrenchFET
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
34mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
41.5nC
Minimum Operating Temperature:
150°C
Maximum Power Dissipation Pd:
3.2W
Maximum Gate Source Voltage Vgs:
20 V
Transistor Configuration:
Isolated
Maximum Operating Temperature:
-55°C
Width:
4 mm
Length:
5mm
Standards/Approvals:
No
Height:
1.55mm
Number of Elements per Chip:
2
Automotive Standard:
No
pdf icon
0900766b81300cb2.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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