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si4403cdy-t1-ge3 Vishay Si4403CDY Type P-Channel MOSFET, 13.4 A, 20 V Enhancement, 8-Pin SOIC SI4403CDY-T1-GE3
si4403cdy-t1-ge3 Vishay Si4403CDY Type P-Channel MOSFET, 13.4 A, 20 V Enhancement, 8-Pin SOIC SI4403CDY-T1-GE3
si4403cdy-t1-ge3 Vishay Si4403CDY Type P-Channel MOSFET, 13.4 A, 20 V Enhancement, 8-Pin SOIC SI4403CDY-T1-GE3

Vishay Si4403CDY Type P-Channel MOSFET, 13.4 A, 20 V Enhancement, 8-Pin SOIC SI4403CDY-T1-GE3

Vishay Si4403CDY Type P-Channel MOSFET, 13.4 A, 20 V Enhancement, 8-Pin SOIC SI4403CDY-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SI4403CDY-T1-GE3
Enrgtech Part No:
ET16723666
Warranty:
Manufacturer
SAR 0.49 SAR 0.49
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type P
Maximum Continuous Drain Current Id:
13.4A
Maximum Drain Source Voltage Vds:
20V
Package Type:
SOIC
Series:
Si4403CDY
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
20mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
8 V
Maximum Power Dissipation Pd:
5W
Typical Gate Charge Qg @ Vgs:
60nC
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
-0.66V
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Length:
5mm
Width:
4 mm
Height:
1.55mm
Automotive Standard:
No
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0900766b814fc560.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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