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si1029x-t1-ge3 Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 6-Pin SC-89-6 SI1029X-T1-GE3
si1029x-t1-ge3 Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 6-Pin SC-89-6 SI1029X-T1-GE3

Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 6-Pin SC-89-6 SI1029X-T1-GE3

Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 6-Pin SC-89-6 SI1029X-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SI1029X-T1-GE3
Enrgtech Part No:
ET16723640
Warranty:
Manufacturer
SAR 0.36 SAR 0.36
Checking for live stock
Channel Type:
Type P, Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
300mA
Maximum Drain Source Voltage Vds:
60V
Series:
TrenchFET
Package Type:
SC-89-6
Mount Type:
Surface
Pin Count:
6
Maximum Drain Source Resistance Rds:
8Ω
Channel Mode:
Enhancement
Forward Voltage Vf:
1.4V
Maximum Power Dissipation Pd:
15.4mm
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
750nC
Maximum Gate Source Voltage Vgs:
±20 V
Maximum Operating Temperature:
150°C
Transistor Configuration:
Isolated
Standards/Approvals:
No
Width:
1.7 mm
Length:
1.7mm
Height:
0.6mm
Number of Elements per Chip:
2
Automotive Standard:
No
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0900766b8126ce34.pdf(datasheets)
pdf icon
0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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