Infineon HEXFET Type N-Channel MOSFET, 42 A, 100 V Enhancement, 3-Pin TO-220 IRF1310NPBF

Infineon HEXFET Type N-Channel MOSFET, 42 A, 100 V Enhancement, 3-Pin TO-220 IRF1310NPBF

Manufacturer:
Manufacturer Part No:
IRF1310NPBF
Enrgtech Part No:
ET14141825
Warranty:
Manufacturer
SAR 1.79 SAR 1.79
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
42A
Maximum Drain Source Voltage Vds:
100V
Series:
HEXFET
Package Type:
TO-220
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
36mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.3V
Maximum Power Dissipation Pd:
1.3 x 0.9 x 0.65mm
Maximum Gate Source Voltage Vgs:
20 V
Typical Gate Charge Qg @ Vgs:
380
Maximum Operating Temperature:
175°C
Length:
10.54mm
Height:
8.77mm
Width:
4.69 mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
0900766b80791724.pdf(datasheets)
pdf icon
0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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