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irlb3036pbf Infineon HEXFET Type N-Channel MOSFET, 270 A, 60 V Enhancement, 3-Pin TO-220
irlb3036pbf Infineon HEXFET Type N-Channel MOSFET, 270 A, 60 V Enhancement, 3-Pin TO-220
irlb3036pbf Infineon HEXFET Type N-Channel MOSFET, 270 A, 60 V Enhancement, 3-Pin TO-220

Infineon HEXFET Type N-Channel MOSFET, 270 A, 60 V Enhancement, 3-Pin TO-220

Infineon HEXFET Type N-Channel MOSFET, 270 A, 60 V Enhancement, 3-Pin TO-220

Manufacturer:
Infineon
Manufacturer Part No:
IRLB3036PBF
Enrgtech Part No:
ET14089551
Warranty:
Manufacturer
SAR 1.73 SAR 1.73
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
270A
Maximum Drain Source Voltage Vds:
60V
Package Type:
TO-220
Series:
HEXFET
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
2mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
380W
Maximum Gate Source Voltage Vgs:
16 V
Forward Voltage Vf:
1.3V
Typical Gate Charge Qg @ Vgs:
PH Series Dis-Connectable Crimp Style Connector
Maximum Operating Temperature:
175°C
Height:
9.02mm
Standards/Approvals:
No
Length:
10.67mm
Width:
EH Connector Housing
Automotive Standard:
No
Distrelec Product Id:
304-43-458
pdf icon
0900766b80dcb3bc.pdf(datasheets)
pdf icon
0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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