Infineon HEXFET Type N-Channel MOSFET, 84 A, 60 V Enhancement, 3-Pin TO-220

Infineon HEXFET Type N-Channel MOSFET, 84 A, 60 V Enhancement, 3-Pin TO-220

Manufacturer:
Manufacturer Part No:
IRF1010EPBF
Enrgtech Part No:
ET14089464
Warranty:
Manufacturer
SAR 0.57 SAR 0.57
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
84A
Maximum Drain Source Voltage Vds:
60V
Package Type:
TO-220
Series:
HEXFET
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
12mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
200W
Forward Voltage Vf:
1.3V
Typical Gate Charge Qg @ Vgs:
130nC
Maximum Operating Temperature:
175°C
Width:
4.69 mm
Length:
10.54mm
Standards/Approvals:
No
Height:
8.77mm
Automotive Standard:
No
Distrelec Product Id:
30341261
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0900766b807910c5.pdf(datasheets)
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0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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