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ipb80p04p407atma1 Infineon OptiMOS P Type P-Channel MOSFET, 80 A, 40 V Enhancement, 3-Pin TO-263 IPB80P04P407ATMA1
ipb80p04p407atma1 Infineon OptiMOS P Type P-Channel MOSFET, 80 A, 40 V Enhancement, 3-Pin TO-263 IPB80P04P407ATMA1
ipb80p04p407atma1 Infineon OptiMOS P Type P-Channel MOSFET, 80 A, 40 V Enhancement, 3-Pin TO-263 IPB80P04P407ATMA1

Infineon OptiMOS P Type P-Channel MOSFET, 80 A, 40 V Enhancement, 3-Pin TO-263 IPB80P04P407ATMA1

Infineon OptiMOS P Type P-Channel MOSFET, 80 A, 40 V Enhancement, 3-Pin TO-263 IPB80P04P407ATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPB80P04P407ATMA1
Enrgtech Part No:
ET14089395
Warranty:
Manufacturer
SAR 1.33 SAR 1.33
Checking for live stock
Channel Type:
Type P
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
80A
Maximum Drain Source Voltage Vds:
40V
Series:
0.38mm
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
7.7mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
88W
Forward Voltage Vf:
-1V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
68nC
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
175°C
Length:
10mm
Standards/Approvals:
No
Width:
9.25 mm
Height:
4.4mm
Automotive Standard:
AEC-Q101
pdf icon
0900766b8132f0a0.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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