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si4532cdy-t1-ge3 Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 6 A, 30 V Enhancement, 8-Pin SOIC SI4532CDY-T1-GE3
si4532cdy-t1-ge3 Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 6 A, 30 V Enhancement, 8-Pin SOIC SI4532CDY-T1-GE3
si4532cdy-t1-ge3 Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 6 A, 30 V Enhancement, 8-Pin SOIC SI4532CDY-T1-GE3

Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 6 A, 30 V Enhancement, 8-Pin SOIC SI4532CDY-T1-GE3

Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 6 A, 30 V Enhancement, 8-Pin SOIC SI4532CDY-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SI4532CDY-T1-GE3
Enrgtech Part No:
ET14080533
Warranty:
Manufacturer
SAR 0.40 SAR 0.40
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type P, Type N
Maximum Continuous Drain Current Id:
6A
Maximum Drain Source Voltage Vds:
30V
Package Type:
SOIC
Series:
TrenchFET
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
140mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
150°C
Maximum Power Dissipation Pd:
2.78W
Maximum Gate Source Voltage Vgs:
20 V
Typical Gate Charge Qg @ Vgs:
6nC
Transistor Configuration:
Isolated
Maximum Operating Temperature:
-55°C
Length:
5mm
Height:
1.5mm
Width:
4 mm
Standards/Approvals:
No
Number of Elements per Chip:
2
Automotive Standard:
No
pdf icon
0900766b8126ce52.pdf(datasheets)
pdf icon
0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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