Infineon HEXFET Type N-Channel MOSFET, 50 A, 200 V Enhancement, 3-Pin TO-247 IRFP260NPBF

Infineon HEXFET Type N-Channel MOSFET, 50 A, 200 V Enhancement, 3-Pin TO-247 IRFP260NPBF

Manufacturer:
Manufacturer Part No:
IRFP260NPBF
Enrgtech Part No:
ET14041450
Warranty:
Manufacturer
SAR 3.33 SAR 3.33
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
50A
Maximum Drain Source Voltage Vds:
200V
Package Type:
TO-247
Series:
HEXFET
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
40mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.3V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
234nC
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
300W
Maximum Operating Temperature:
175°C
Length:
15.9mm
Width:
5.3 mm
Height:
20.3mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
0900766b80791211.pdf(datasheets)
pdf icon
0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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