Infineon HEXFET Type P-Channel MOSFET, 40 A, 100 V Enhancement, 3-Pin TO-220 IRF5210PBF

Infineon HEXFET Type P-Channel MOSFET, 40 A, 100 V Enhancement, 3-Pin TO-220 IRF5210PBF

Manufacturer:
Manufacturer Part No:
IRF5210PBF
Enrgtech Part No:
ET14041412
Warranty:
Manufacturer
SAR 2.29 SAR 2.29
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type P
Maximum Continuous Drain Current Id:
40A
Maximum Drain Source Voltage Vds:
100V
Package Type:
TO-220
Series:
HEXFET
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
60mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
180nC
Forward Voltage Vf:
-1.6V
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
200W
Maximum Operating Temperature:
175°C
Standards/Approvals:
No
Height:
8.77mm
Width:
4.69 mm
Length:
10.54mm
Distrelec Product Id:
30341280
Automotive Standard:
No
pdf icon
0900766b807910f5.pdf(datasheets)
pdf icon
0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



Product Reviews