Vishay Si4435DDY Type P-Channel MOSFET, 8.1 A, 30 V Enhancement, 8-Pin SOIC SI4435DDY-T1-GE3

Vishay Si4435DDY Type P-Channel MOSFET, 8.1 A, 30 V Enhancement, 8-Pin SOIC SI4435DDY-T1-GE3

Manufacturer:
Manufacturer Part No:
SI4435DDY-T1-GE3
Enrgtech Part No:
ET14011104
Warranty:
Manufacturer
SAR 0.42 SAR 0.42
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Channel Type:
Type P
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
8.1A
Maximum Drain Source Voltage Vds:
30V
Series:
Si4435DDY
Package Type:
SOIC
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
24mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
2.5W
Typical Gate Charge Qg @ Vgs:
32nC
Forward Voltage Vf:
-1.2V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Length:
5mm
Height:
1.5mm
Width:
4 mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
0900766b80ed1eb9.pdf(datasheets)
pdf icon
0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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