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tk12p60wrvqs Toshiba DTMOSIV Type N-Channel MOSFET, 11.5 A, 600 V Enhancement, 3-Pin TO-252 TK12P60W,RVQ(S
tk12p60wrvqs Toshiba DTMOSIV Type N-Channel MOSFET, 11.5 A, 600 V Enhancement, 3-Pin TO-252 TK12P60W,RVQ(S
tk12p60wrvqs Toshiba DTMOSIV Type N-Channel MOSFET, 11.5 A, 600 V Enhancement, 3-Pin TO-252 TK12P60W,RVQ(S

Toshiba DTMOSIV Type N-Channel MOSFET, 11.5 A, 600 V Enhancement, 3-Pin TO-252 TK12P60W,RVQ(S

Toshiba DTMOSIV Type N-Channel MOSFET, 11.5 A, 600 V Enhancement, 3-Pin TO-252 TK12P60W,RVQ(S

Manufacturer:
Toshiba
Manufacturer Part No:
TK12P60W,RVQ(S
Enrgtech Part No:
ET13996399
Warranty:
Manufacturer
SAR 1.58 SAR 1.58
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
Jumper Socket
Maximum Drain Source Voltage Vds:
600V
Series:
DTMOSIV
Package Type:
TO-252
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
340mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
30 V
Forward Voltage Vf:
-1.7V
Typical Gate Charge Qg @ Vgs:
25nC
Maximum Power Dissipation Pd:
100W
Maximum Operating Temperature:
150°C
Length:
6.6mm
Width:
6.1 mm
Standards/Approvals:
No
Height:
2.3mm
Automotive Standard:
No
pdf icon
0900766b8131f986.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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