Infineon HEXFET Type N-Channel MOSFET, 18 A, 55 V Enhancement, 3-Pin TO-220AB IRLZ24NPBF

Infineon HEXFET Type N-Channel MOSFET, 18 A, 55 V Enhancement, 3-Pin TO-220AB IRLZ24NPBF

Manufacturer:
Manufacturer Part No:
IRLZ24NPBF
Enrgtech Part No:
ET13987861
Warranty:
Manufacturer
SAR 0.69 SAR 0.69
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
18A
Maximum Drain Source Voltage Vds:
55V
Package Type:
TO-220AB
Series:
HEXFET
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
60mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
15nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
16 V
Forward Voltage Vf:
1.3V
Maximum Power Dissipation Pd:
45W
Maximum Operating Temperature:
175°C
Height:
8.77mm
Width:
4.69 mm
Length:
10.54mm
Standards/Approvals:
JEDEC TO-220AB, ANSI Y14.5M, 1982
Automotive Standard:
No
pdf icon
0900766b807913d0.pdf(datasheets)
pdf icon
0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



Product Reviews