Infineon HEXFET Type N-Channel MOSFET, 290 A, 100 V Enhancement, 3-Pin TO-247 IRFP4468PBF

Infineon HEXFET Type N-Channel MOSFET, 290 A, 100 V Enhancement, 3-Pin TO-247 IRFP4468PBF

Manufacturer:
Manufacturer Part No:
IRFP4468PBF
Enrgtech Part No:
ET13987765
Warranty:
Manufacturer
SAR 4.37 SAR 4.37
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
290A
Maximum Drain Source Voltage Vds:
100V
Series:
HEXFET
Package Type:
TO-247
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
3mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.3V
Typical Gate Charge Qg @ Vgs:
360nC
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
520W
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
175°C
Standards/Approvals:
No
Length:
15.87mm
Height:
20.7mm
Width:
5.31 mm
Automotive Standard:
No
pdf icon
0900766b80dcace1.pdf(datasheets)
pdf icon
0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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