Infineon OptiMOS Type N-Channel MOSFET, 190 mA, 100 V Enhancement, 3-Pin SOT-23

Infineon OptiMOS Type N-Channel MOSFET, 190 mA, 100 V Enhancement, 3-Pin SOT-23

Manufacturer:
Manufacturer Part No:
BSS123NH6433XTMA1
Enrgtech Part No:
ET13987537
Warranty:
Manufacturer
SAR 0.06 SAR 0.06
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
190mA
Maximum Drain Source Voltage Vds:
100V
Package Type:
SOT-23
Series:
OptiMOS
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
10Ω
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
0.6nC
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
500mW
Forward Voltage Vf:
0.8V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Length:
2.9mm
Standards/Approvals:
No
Width:
1.3 mm
Height:
1mm
Automotive Standard:
AEC-Q101
Distrelec Product Id:
304-44-423
pdf icon
0900766b8132f052.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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