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si4214ddy-t1-ge3 Vishay Isolated TrenchFET 2 Type N-Channel Power MOSFET, 7.5 A, 30 V Enhancement, 8-Pin SOIC SI4214DDY-T1-GE3
si4214ddy-t1-ge3 Vishay Isolated TrenchFET 2 Type N-Channel Power MOSFET, 7.5 A, 30 V Enhancement, 8-Pin SOIC SI4214DDY-T1-GE3
si4214ddy-t1-ge3 Vishay Isolated TrenchFET 2 Type N-Channel Power MOSFET, 7.5 A, 30 V Enhancement, 8-Pin SOIC SI4214DDY-T1-GE3

Vishay Isolated TrenchFET 2 Type N-Channel Power MOSFET, 7.5 A, 30 V Enhancement, 8-Pin SOIC SI4214DDY-T1-GE3

Vishay Isolated TrenchFET 2 Type N-Channel Power MOSFET, 7.5 A, 30 V Enhancement, 8-Pin SOIC SI4214DDY-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SI4214DDY-T1-GE3
Enrgtech Part No:
ET13977402
Warranty:
Manufacturer
SAR 0.54 SAR 0.54
Checking for live stock
Channel Type:
Type N
Product Type:
Power MOSFET
Maximum Continuous Drain Current Id:
7.5A
Maximum Drain Source Voltage Vds:
30V
Series:
TrenchFET
Package Type:
SOIC
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
19.5mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
2W
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
150°C
Typical Gate Charge Qg @ Vgs:
14.5nC
Transistor Configuration:
Isolated
Maximum Operating Temperature:
-55°C
Standards/Approvals:
No
Width:
4 mm
Length:
5mm
Height:
1.5mm
Number of Elements per Chip:
2
Automotive Standard:
No
pdf icon
0900766b80ed1eb2.pdf(datasheets)
pdf icon
0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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