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si4128dy-t1-ge3 Vishay TrenchFET Type N-Channel MOSFET, 10.9 A, 30 V Enhancement, 8-Pin SOIC SI4128DY-T1-GE3
si4128dy-t1-ge3 Vishay TrenchFET Type N-Channel MOSFET, 10.9 A, 30 V Enhancement, 8-Pin SOIC SI4128DY-T1-GE3
si4128dy-t1-ge3 Vishay TrenchFET Type N-Channel MOSFET, 10.9 A, 30 V Enhancement, 8-Pin SOIC SI4128DY-T1-GE3

Vishay TrenchFET Type N-Channel MOSFET, 10.9 A, 30 V Enhancement, 8-Pin SOIC SI4128DY-T1-GE3

Vishay TrenchFET Type N-Channel MOSFET, 10.9 A, 30 V Enhancement, 8-Pin SOIC SI4128DY-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SI4128DY-T1-GE3
Enrgtech Part No:
ET13977400
Warranty:
Manufacturer
SAR 0.75 SAR 0.75
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
10.9A
Maximum Drain Source Voltage Vds:
30V
Package Type:
SOIC
Series:
TrenchFET
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
0.03Ω
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
3.8nC
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
5W
Maximum Gate Source Voltage Vgs:
±20 V
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
150°C
Standards/Approvals:
IEC 61249-2-21
Height:
1.5mm
Width:
4 mm
Length:
5mm
Automotive Standard:
No
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0900766b80ed1eaf.pdf(datasheets)
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0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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