Channel Type:
N, P
Maximum Continuous Drain Current:
2.3 A, 3.5 A
Maximum Drain Source Voltage:
25 V
Series:
HEXFET
Package Type:
SOIC
Mounting Type:
Surface Mount
Pin Count:
8
Maximum Drain Source Resistance:
160 mΩ, 400 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
3V
Minimum Gate Threshold Voltage:
1V
Maximum Power Dissipation:
2 W
Transistor Configuration:
Isolated
Maximum Gate Source Voltage:
-20 V, +20 V
Length:
5mm
Typical Gate Charge @ Vgs:
10 nC @ 10 V, 9.4 nC @ 10 V
Number of Elements per Chip:
2
Maximum Operating Temperature:
+150 °C
Width:
4mm
Transistor Material:
Si
Height:
1.5mm
Minimum Operating Temperature:
-55 °C
