Infineon OptiMOS Type N-Channel MOSFET, 1.2 A, 100 V Enhancement, 4-Pin SOT-223 BSP296NH6327XTSA1

Infineon OptiMOS Type N-Channel MOSFET, 1.2 A, 100 V Enhancement, 4-Pin SOT-223 BSP296NH6327XTSA1

Manufacturer:
Manufacturer Part No:
BSP296NH6327XTSA1
Enrgtech Part No:
ET13933013
Warranty:
Manufacturer
SAR 0.22 SAR 0.22
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
1.2A
Maximum Drain Source Voltage Vds:
100V
Series:
OptiMOS
Package Type:
SOT-223
Mount Type:
Surface
Pin Count:
4
Maximum Drain Source Resistance Rds:
800mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
4.5nC
Forward Voltage Vf:
0.85V
Maximum Power Dissipation Pd:
1.8W
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Length:
6.5mm
Height:
1.6mm
Width:
3.5 mm
Automotive Standard:
AEC-Q101
Distrelec Product Id:
304-44-413
pdf icon
0900766b8132f025.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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