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si5935cdc-t1-ge3 Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 3.8 A, 20 V Enhancement, 8-Pin ChipFET SI5935CDC-T1-GE3
si5935cdc-t1-ge3 Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 3.8 A, 20 V Enhancement, 8-Pin ChipFET SI5935CDC-T1-GE3

Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 3.8 A, 20 V Enhancement, 8-Pin ChipFET SI5935CDC-T1-GE3

Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 3.8 A, 20 V Enhancement, 8-Pin ChipFET SI5935CDC-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SI5935CDC-T1-GE3
Enrgtech Part No:
ET13923032
Warranty:
Manufacturer
SAR 0.14 SAR 0.14
Checking for live stock
Channel Type:
Type P
Product Type:
Power MOSFET
Maximum Continuous Drain Current Id:
3.8A
Maximum Drain Source Voltage Vds:
20V
Package Type:
ChipFET
Series:
TrenchFET
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
156mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
3.1W
Maximum Gate Source Voltage Vgs:
8 V
Typical Gate Charge Qg @ Vgs:
-25 °C
Minimum Operating Temperature:
150°C
Maximum Operating Temperature:
-55°C
Transistor Configuration:
Isolated
Length:
3.1mm
Width:
1.7 mm
Height:
1.1mm
Standards/Approvals:
No
Number of Elements per Chip:
2
Automotive Standard:
No
pdf icon
0900766b81300cc5.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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