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si4946bey-t1-ge3 Vishay Isolated TrenchFET 2 Type N-Channel MOSFET, 6.5 A, 60 V Enhancement, 8-Pin SOIC SI4946BEY-T1-GE3
si4946bey-t1-ge3 Vishay Isolated TrenchFET 2 Type N-Channel MOSFET, 6.5 A, 60 V Enhancement, 8-Pin SOIC SI4946BEY-T1-GE3
si4946bey-t1-ge3 Vishay Isolated TrenchFET 2 Type N-Channel MOSFET, 6.5 A, 60 V Enhancement, 8-Pin SOIC SI4946BEY-T1-GE3

Vishay Isolated TrenchFET 2 Type N-Channel MOSFET, 6.5 A, 60 V Enhancement, 8-Pin SOIC SI4946BEY-T1-GE3

Vishay Isolated TrenchFET 2 Type N-Channel MOSFET, 6.5 A, 60 V Enhancement, 8-Pin SOIC SI4946BEY-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SI4946BEY-T1-GE3
Enrgtech Part No:
ET13923031
Warranty:
Manufacturer
SAR 1.45 SAR 1.45
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
6.5A
Maximum Drain Source Voltage Vds:
60V
Series:
TrenchFET
Package Type:
SOIC
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
52mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
3.7W
Typical Gate Charge Qg @ Vgs:
17nC
Maximum Gate Source Voltage Vgs:
±20 V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
175°C
Transistor Configuration:
Isolated
Length:
5mm
Width:
4 mm
Height:
1.55mm
Standards/Approvals:
No
Number of Elements per Chip:
2
Automotive Standard:
No
pdf icon
0900766b8126ce55.pdf(datasheets)
pdf icon
0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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