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si7121dn-t1-ge3 Vishay P-Channel MOSFET, 9.6 A, 30 V, 8-Pin PowerPAK 1212-8 SI7121DN-T1-GE3
si7121dn-t1-ge3 Vishay P-Channel MOSFET, 9.6 A, 30 V, 8-Pin PowerPAK 1212-8 SI7121DN-T1-GE3

Vishay P-Channel MOSFET, 9.6 A, 30 V, 8-Pin PowerPAK 1212-8 SI7121DN-T1-GE3

Vishay P-Channel MOSFET, 9.6 A, 30 V, 8-Pin PowerPAK 1212-8 SI7121DN-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SI7121DN-T1-GE3
Enrgtech Part No:
ET13883948
Warranty:
Manufacturer
SAR 1.90
Checking for live stock
Channel Type:
P
Maximum Continuous Drain Current:
9.6 A
Maximum Drain Source Voltage:
30 V
Package Type:
PowerPAK 1212-8
Mounting Type:
Surface Mount
Pin Count:
8
Maximum Drain Source Resistance:
26 mΩ
Channel Mode:
Enhancement
Minimum Gate Threshold Voltage:
1V
Maximum Power Dissipation:
27.8 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
-25 V, +25 V
Typical Gate Charge @ Vgs:
33 nC @ 10 V
Length:
3.15mm
Number of Elements per Chip:
1
Width:
3.15mm
Maximum Operating Temperature:
+150 °C
Transistor Material:
Si
Minimum Operating Temperature:
-50 °C
Height:
1.07mm
pdf icon
0900766b81300cca.pdf(datasheets)
pdf icon
0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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