Infineon HEXFET Type N-Channel MOSFET, 30 A, 200 V Enhancement, 3-Pin TO-247 IRFP250MPBF

Infineon HEXFET Type N-Channel MOSFET, 30 A, 200 V Enhancement, 3-Pin TO-247 IRFP250MPBF

Manufacturer:
Manufacturer Part No:
IRFP250MPBF
Enrgtech Part No:
ET13874905
Warranty:
Manufacturer
SAR 2.14 SAR 2.14
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
30A
Maximum Drain Source Voltage Vds:
200V
Series:
HEXFET
Package Type:
TO-247
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
75mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.3V
Typical Gate Charge Qg @ Vgs:
123nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
214W
Maximum Operating Temperature:
175°C
Height:
21.1mm
Width:
5.2 mm
Length:
31.5 x 22 x 36.5mm
Standards/Approvals:
No
Automotive Standard:
No
Distrelec Product Id:
304-36-390
pdf icon
0900766b8132f4d5.pdf(datasheets)
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0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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