Infineon HEXFET Type N-Channel MOSFET, 63 A, 100 V Enhancement, 3-Pin TO-252 IRFR4510TRPBF

Infineon HEXFET Type N-Channel MOSFET, 63 A, 100 V Enhancement, 3-Pin TO-252 IRFR4510TRPBF

Manufacturer:
Manufacturer Part No:
IRFR4510TRPBF
Enrgtech Part No:
ET13874896
Warranty:
Manufacturer
SAR 0.41 SAR 0.41
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
63A
Maximum Drain Source Voltage Vds:
100V
Series:
HEXFET
Package Type:
TO-252
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
13.9mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.3V
Typical Gate Charge Qg @ Vgs:
6.49kΩ
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
143W
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
175°C
Width:
7.49 mm
Height:
2.39mm
Standards/Approvals:
No
Length:
6.73mm
Distrelec Product Id:
304-44-463
Automotive Standard:
No
pdf icon
0900766b814a38a7.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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