Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-220

Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-220

Manufacturer:
Manufacturer Part No:
IRLB4030PBF
Enrgtech Part No:
ET13874842
Warranty:
Manufacturer
SAR 2.73 SAR 2.73
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
180A
Maximum Drain Source Voltage Vds:
100V
Package Type:
TO-220
Series:
HEXFET
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
4mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
87nC
Maximum Power Dissipation Pd:
370W
Maximum Gate Source Voltage Vgs:
16 V
Forward Voltage Vf:
1.3V
Maximum Operating Temperature:
175°C
Length:
10.67mm
Standards/Approvals:
No
Height:
9.02mm
Width:
EH Connector Housing
Distrelec Product Id:
304-35-447
Automotive Standard:
No
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0900766b80dcb3bd.pdf(datasheets)
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0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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