Infineon SIPMOS Type P-Channel MOSFET, 1.17 A, 60 V Enhancement, 4-Pin SOT-223 BSP315PH6327XTSA1

Infineon SIPMOS Type P-Channel MOSFET, 1.17 A, 60 V Enhancement, 4-Pin SOT-223 BSP315PH6327XTSA1

Manufacturer:
Manufacturer Part No:
BSP315PH6327XTSA1
Enrgtech Part No:
ET13874588
Warranty:
Manufacturer
SAR 0.39 SAR 0.39
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Channel Type:
Type P
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
1.17A
Maximum Drain Source Voltage Vds:
60V
Package Type:
SOT-223
Series:
499Ω
Mount Type:
Surface
Pin Count:
4
Maximum Drain Source Resistance Rds:
800mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
5.2nC
Maximum Power Dissipation Pd:
1.8W
Forward Voltage Vf:
-0.97V
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Width:
3.5 mm
Height:
1.6mm
Length:
6.5mm
Distrelec Product Id:
304-44-415
Automotive Standard:
AEC-Q101
pdf icon
0900766b8132f029.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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