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tk39a60ws4vxm Toshiba DTMOSIV Type N-Channel MOSFET, 39 A, 600 V Enhancement, 3-Pin TO-220 TK39A60W,S4VX(M
tk39a60ws4vxm Toshiba DTMOSIV Type N-Channel MOSFET, 39 A, 600 V Enhancement, 3-Pin TO-220 TK39A60W,S4VX(M
tk39a60ws4vxm Toshiba DTMOSIV Type N-Channel MOSFET, 39 A, 600 V Enhancement, 3-Pin TO-220 TK39A60W,S4VX(M

Toshiba DTMOSIV Type N-Channel MOSFET, 39 A, 600 V Enhancement, 3-Pin TO-220 TK39A60W,S4VX(M

Toshiba DTMOSIV Type N-Channel MOSFET, 39 A, 600 V Enhancement, 3-Pin TO-220 TK39A60W,S4VX(M

Manufacturer:
Toshiba
Manufacturer Part No:
TK39A60W,S4VX(M
Enrgtech Part No:
ET13865011
Warranty:
Manufacturer
SAR 3.80 SAR 3.80
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
39A
Maximum Drain Source Voltage Vds:
600V
Package Type:
TO-220
Series:
DTMOSIV
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
50 Vrms ac/dc
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
30 V
Typical Gate Charge Qg @ Vgs:
380
Maximum Power Dissipation Pd:
50W
Forward Voltage Vf:
-1.7V
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Length:
10mm
Width:
4.5 mm
Height:
15mm
Automotive Standard:
No
pdf icon
0900766b8143d6e5.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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