Enrgtech
Enrgtech

Deliver to

Saudi Arabia

Categories
Brands
Part Numbers
Top Products
Register
0
You have 0 item in your basket
VIEW BASKET CHECK OUT
dmn2014lhab-7 DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 9.3 A, 20 V Enhancement, 7-Pin UDFN DMN2014LHAB-7
dmn2014lhab-7 DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 9.3 A, 20 V Enhancement, 7-Pin UDFN DMN2014LHAB-7

DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 9.3 A, 20 V Enhancement, 7-Pin UDFN DMN2014LHAB-7

DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 9.3 A, 20 V Enhancement, 7-Pin UDFN DMN2014LHAB-7

Manufacturer:
DiodesZetex
Manufacturer Part No:
DMN2014LHAB-7
Enrgtech Part No:
ET13856502
Warranty:
Manufacturer
SAR 0.25 SAR 0.25
Checking for live stock
Product Type:
Power MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
9.3A
Maximum Drain Source Voltage Vds:
20V
Package Type:
UDFN
Mount Type:
Surface
Pin Count:
7
Maximum Drain Source Resistance Rds:
28mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
12 V
Minimum Operating Temperature:
150°C
Typical Gate Charge Qg @ Vgs:
0.5nC
Maximum Power Dissipation Pd:
1.7W
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
-55°C
Transistor Configuration:
Isolated
Length:
3.05mm
Standards/Approvals:
AEC-Q101, UL 94V-0, RoHS, J-STD-020, MIL-STD-202
Width:
2.05 mm
Height:
0.6mm
Number of Elements per Chip:
2
Automotive Standard:
AEC-Q101
pdf icon
0900766b8133220c.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
Product Reviews