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sira00dp-t1-ge3 Vishay TrenchFET Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SO-8 SIRA00DP-T1-GE3
sira00dp-t1-ge3 Vishay TrenchFET Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SO-8 SIRA00DP-T1-GE3

Vishay TrenchFET Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SO-8 SIRA00DP-T1-GE3

Vishay TrenchFET Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SO-8 SIRA00DP-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SIRA00DP-T1-GE3
Enrgtech Part No:
ET13831325
Warranty:
Manufacturer
SAR 2.26 SAR 2.26
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
100A
Maximum Drain Source Voltage Vds:
30V
Package Type:
SO-8
Series:
TrenchFET
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
1.35mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
147nC
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
104W
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.1V
Maximum Operating Temperature:
150°C
Length:
6.25mm
Standards/Approvals:
No
Height:
1.12mm
Width:
5.26 mm
Automotive Standard:
No
pdf icon
0900766b8126cf10.pdf(datasheets)
pdf icon
0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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