Infineon HEXFET Type N-Channel MOSFET, 195 A, 150 V Enhancement, 3-Pin TO-263 IRFS4115TRLPBF

Infineon HEXFET Type N-Channel MOSFET, 195 A, 150 V Enhancement, 3-Pin TO-263 IRFS4115TRLPBF

Manufacturer:
Manufacturer Part No:
IRFS4115TRLPBF
Enrgtech Part No:
ET13831032
Warranty:
Manufacturer
SAR 2.80 SAR 2.80
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
195A
Maximum Drain Source Voltage Vds:
150V
Package Type:
TO-263
Series:
HEXFET
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
12.1mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.3V
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
375W
Maximum Gate Source Voltage Vgs:
20 V
Typical Gate Charge Qg @ Vgs:
77nC
Maximum Operating Temperature:
175°C
Standards/Approvals:
No
Height:
4.83mm
Width:
11.3 mm
Length:
10.67mm
Automotive Standard:
AEC-Q101
Distrelec Product Id:
304-44-468
pdf icon
0900766b814a38b2.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



Product Reviews