Enrgtech
Enrgtech

Deliver to

Saudi Arabia

Categories
Brands
Part Numbers
Top Products
Register
0
You have 0 item in your basket
VIEW BASKET CHECK OUT
si9407bdy-t1-ge3 Vishay Si9407BDY Type P-Channel TrenchFET Power MOSFET, 4.7 A, 60 V Enhancement, 8-Pin SOIC SI9407BDY-T1-GE3
si9407bdy-t1-ge3 Vishay Si9407BDY Type P-Channel TrenchFET Power MOSFET, 4.7 A, 60 V Enhancement, 8-Pin SOIC SI9407BDY-T1-GE3
si9407bdy-t1-ge3 Vishay Si9407BDY Type P-Channel TrenchFET Power MOSFET, 4.7 A, 60 V Enhancement, 8-Pin SOIC SI9407BDY-T1-GE3

Vishay Si9407BDY Type P-Channel TrenchFET Power MOSFET, 4.7 A, 60 V Enhancement, 8-Pin SOIC SI9407BDY-T1-GE3

Vishay Si9407BDY Type P-Channel TrenchFET Power MOSFET, 4.7 A, 60 V Enhancement, 8-Pin SOIC SI9407BDY-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SI9407BDY-T1-GE3
Enrgtech Part No:
ET13800277
Warranty:
Manufacturer
SAR 0.79 SAR 0.79
Checking for live stock
Channel Type:
Type P
Product Type:
TrenchFET Power MOSFET
Maximum Continuous Drain Current Id:
4.7A
Maximum Drain Source Voltage Vds:
60V
Package Type:
SOIC
Series:
Si9407BDY
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
0.12Ω
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
8nC
Forward Voltage Vf:
-0.8V
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
±20 V
Maximum Power Dissipation Pd:
5W
Maximum Operating Temperature:
150°C
Width:
4 mm
Standards/Approvals:
IEC 61249-2-21, RoHS 2002/95/EC
Length:
5mm
Height:
1.55mm
Automotive Standard:
No
pdf icon
0900766b81300d3a.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
Product Reviews