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si2318cds-t1-ge3 Vishay Si2318CDS Type N-Channel MOSFET, 5.6 A, 40 V Enhancement, 3-Pin SOT-23 SI2318CDS-T1-GE3
si2318cds-t1-ge3 Vishay Si2318CDS Type N-Channel MOSFET, 5.6 A, 40 V Enhancement, 3-Pin SOT-23 SI2318CDS-T1-GE3
si2318cds-t1-ge3 Vishay Si2318CDS Type N-Channel MOSFET, 5.6 A, 40 V Enhancement, 3-Pin SOT-23 SI2318CDS-T1-GE3

Vishay Si2318CDS Type N-Channel MOSFET, 5.6 A, 40 V Enhancement, 3-Pin SOT-23 SI2318CDS-T1-GE3

Vishay Si2318CDS Type N-Channel MOSFET, 5.6 A, 40 V Enhancement, 3-Pin SOT-23 SI2318CDS-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SI2318CDS-T1-GE3
Enrgtech Part No:
ET13796418
Warranty:
Manufacturer
SAR 0.51 SAR 0.51
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
5.6A
Maximum Drain Source Voltage Vds:
40V
Series:
Si2318CDS
Package Type:
SOT-23
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
51mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1.2V
Typical Gate Charge Qg @ Vgs:
5.8nC
Maximum Power Dissipation Pd:
2.1W
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Width:
1.4 mm
Length:
3.04mm
Height:
1.02mm
Automotive Standard:
No
Distrelec Product Id:
30402276
pdf icon
0900766b8126ce49.pdf(datasheets)
pdf icon
0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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